HSPICE Tutorial - University of California, Berkeley

HSPICE Tutorial Contents 1 Introduction 1 ... ee105 spice tutorial example 1 - simple rc circuit in the Results Browser and double-clicking vs and vo to plot them in the graph. You may have been able to guess from the netlist, but you’ll see that vsis a …

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Introduction to LabVIEW - University of California, …

Introduction to LabVIEW 1. Introduction Welcome to the LabVIEW component of EE100! This lab is just a simple introduction to the graphical circuit simulation ...

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EE105 –Fall 2015 Microelectronic Devices and Circuits

Summary of MOS Single-­Transistor Amplifiers MOS Common Source Common Source with Deg. Common Drain Common Gate Ri ∞ ∞ ∞ Small Ro Large Very Large Small Large

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Diodes and Transistors

Diodes and Transistors 1. ... basic semiconductor physics. We won’t discuss the details because the point of this ... switch. Below the specified ...

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Introduction to LabVIEW For Use in Embedded …

UC Berkeley EE249 Hugo.Andrade@ni.com Introduction to LabVIEW For Use in Embedded System Development

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Introduction to Digital Systems - University of …

Department of EECS EE100/42-43 Spring 2007 Rev. 1 Introduction to Digital Systems 0. Acknowledgments Many thanks to Prof. Bernhard Boser and National Instruments for funding this project in the

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EE126: Probability and Random Processes - Lecture 1 ...

probability 4 The probabilities summed over all of the base outcomes always equals 1 Example: Toss a fair coin twice 1 Base outcomes are HH,HT,TH,TT 2 This covers all the possibilities. M.E. 3 Each of these outcomes is equally likely 4 Assign each outcome a probability of 0:25. The list (set) of base outcomes is called the Sample Space.

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EECS 126 Probability and Random Processes: Course Syllabus ...

Description: Probability is a mathematical discipline that allows one to reason about uncertainty: it helps us to predict uncertain events, to make better decisions under uncertainty, and to design and build systems. Throughout the course, we will teach you the fundamental ideas of probability and random processes along with the labs.

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3-Phase Brushless DC Motor Pre-Driver

Description The A4931 is a complete 3-phase brushless DC motor pre-driver . The device is capable of driving a wide range of N-channel power MOSFETs and can support motor supply voltages up to

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DS -V I G - EECS Instructional Support Group Home Page

G D S I D I G-V DS + + V G S _ NMOS I-V CHARACTERISTIC • Since the transistor is a 3-terminal device, there is no single I-V characteristic. • Note that because of the gate insulator, I G = 0 A. • We typically define the MOS I-V characteristic as I D vs. V DS for a fixed V GS. • 3 modes of operation

Chapter 14 BJT Models - University of Washington

BJT Models Using the BJT Element Star-Hspice Manual, Release 1998.2 14-7 BJT Equivalent Circuits HSPICE uses four equivalent circuits in the analysis of BJTs: DC, transient, AC, and AC noise circuits. The components of these circuits form the basis for all element and model equations. Since these circuits represent the entire BJT in

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BJT Equivalent Circuit Models - University of North ...

Section C3: BJT Equivalent Circuit Models OK, we’ve got the terminal currents defined in terms of our gain constants and each other. Now… we’ve got to come up with a model for the entire device that we can put in an electrical circuit for design and analysis! The large signal model introduced in section 4.2 of your text (and illustrated

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ECE 255, MOSFET Small Signal Analysis - Purdue University

2 Small Signal Equivalent-Circuit Models By looking at the i-vcharacteristic curve of the MOSFET as shown in Table 5.1, it is seen for incremental v ds, the current i d does not change. This relationship can be modeled by a current source. Moreover, the gate of the MOSFET is essentially an open circuit at DC. Hence, the small-signal equivalent ...

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Modeling and Simulation of Permanent Magnet Synchronous ...

III Equivalent Circuit of Permanent Magnet Synchronous Motor Equivalent circuits of the motors are used for study and simulation of motors. From the d-q modeling of the motor using the stator voltage equations the equivalent circuit of the motor can be derived. Assuming rotor d axis flux from the permanent magnets

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Lecture 15: MOS Transistor models: Body effects, SPICE models

signal models: Chapter 6 zwe will then take a week on bipolar junction transistor (BJT): Chapter 7 zThen go on to design of transistor amplifiers: chapter 8 Department of EECS University of California, Berkeley EECS 105 Spring 2004, Lecture 15 Prof. J. S. Smith MOS operation zAn inversion mode MOS transistor operates by producing

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MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS - IXYS …

PARASITIC BJT DRAIN DRAIN BODY DEPLETION LAYER INTERNAL BODY DIODE O V GS Actual Linearized gm = DRAIN CURRENT ID VGS(th) VGS ID ID VGS Fig. (2) Transfer characteristics of a power MOSFET 1.2 MOSFET MODELS AND CRITICAL PARAMETERS Fig. (1A) shows the internal cell structure of a DMOS MOSFET. As can be seen, the Gate to …

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Bipolar Transistor - Chenming Hu

bipolar transistor models are introduced, i.e. , Ebers–Moll model, small-signal model, and charge control model. Each model has its own areas of applications. he bipolar junction transistor or BJT was invented in 1948 at Bell Telephone Laboratories, New Jersey, USA. It was the first mass produced transistor,

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