Transcription of Lecture 8 - MIT
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Lecture 8 - MIT
Spring 2007 Lecture 81 Lecture 8 MOSFET(I)MOSFET I-V : cross-section, layout, characteristicsReading Assignment:Howe and Sodini, Chapter 4, Sections :Quiz#1, March 14, 7:30-9:30PM, Walker memorial ; covers Lectures #1-9; open book; must have Spring 2007 Lecture 821. MOSFET: layout, cross-section, symbols Inversion layer under gate(depending on gate voltage) Heavily doped regions reach underneath gate inversion layer to electrically connect sourceand drain 4-terminal device: bodyvoltage importantKey elements: deposited oxidefieldoxiden+ drain diffusiondraininterconnect p+[ p-type ]bulkinterconnectLdiffgate contact(a) Adraincontactsbulkcontactn+ polysilicon gate active area (thinoxide area)polysilicon gatecontactmetalinterconnectn+ source diffusionedge ofactive area sourceinterconnect(b)Ln+ polysilicon gate gate oxidegateinterconnectsource Spring 2007 Lecture 83 Circuit symbolsTwo complementary devices.
6.012 Spring 2007 Lecture 8 1 Lecture 8 MOSFET(I) MOSFET I-V CHARACTERISTICS Outline 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics Reading Assignment: Howe and Sodini, Chapter 4, Sections 4.1-4.3 Announcement: Quiz#1, March 14, 7:30-9:30PM, Walker Memorial; covers Lectures #1-9; open book; must have ...
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