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Lecture11-MOS Cap Delay

EE1411 EECS1411 Lecture #11EE141EE141--Fall 2010 Fall 2010 Digital Integrated Digital Integrated CircuitsCircuitsLecture 11 Lecture 11 MOS capacitance MOS capacitance and Delayand DelayEE1412 EECS1412 Lecture #11 AnnouncementsAnnouncements No lab Fri., Mon. Labs restart next week Midterm #1 Thurs. Oct. 7th, 6:30-8:00pm Exam is open notes, book, calculators, #11 Class MaterialClass Material Last lecture Using the MOS model: Inverter VTC Today s lecture MOS capacitance Using the MOS Model: Delay Reading ( , )EE1414 EECS1414 Lecture #11 MOS CapacitanceMOS CapacitanceEE1415 EECS1415 Lecture #11 CGDCGSCSBCDBCGBMOS CapacitancesMOS Capacitances= CGCS+ CGSO= CGCD+ CGDO= CGCB= CdiffGSDB= CdiffEE1416 EECS1416 Lecture #11 Gate CapacitanceGate capacitance capacitance (per area) from gate across the oxide is W L Cox, where Cox= ox/toxEE1417 EECS1417 Lecture #11 Gate CapacitanceGate capacitance Distribution between terminals is complex capacitance is really distributed Useful models lump it to the terminals Several operating regions: Way off, off, transistor linear, transistor saturatedEE1418 EECS1418 Lecture #11 Transistor In CutoffTransistor In Cutoff When the transistor is off, no carriers in channel to form the other side of the capacitor.

MOS Capacitance Using the MOS Model: Delay Reading (3.3.2, 5.4.2) EE141 4 EECS141 Lecture #11 4 MOS Capacitance EE141 5 EECS141 Lecture #11 5 CGS CGD CSB CGB CDB MOS Capacitances = CGCS + CGSO = C GCD + CGDO = CGCB = Cdiff G SD B = Cdiff EE141 6 EECS141 Lecture #11 6 Gate Capacitance Capacitance (per area) from gate across the oxide is W·L·C ...

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