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Lecture11-MOS Cap Delay

EE1411 EECS1411 Lecture #11EE141EE141--Fall 2010 Fall 2010 Digital Integrated Digital Integrated CircuitsCircuitsLecture 11 Lecture 11 MOS Capacitance MOS Capacitance and Delayand DelayEE1412 EECS1412 Lecture #11 AnnouncementsAnnouncements No lab Fri., Mon. Labs restart next week Midterm #1 Thurs. Oct. 7th, 6:30-8:00pm Exam is open notes, book, calculators, #11 Class MaterialClass Material Last lecture Using the MOS model: Inverter VTC Today s lecture MOS Capacitance Using the MOS Model: Delay Reading ( , )EE1414 EECS1414 Lecture #11 MOS CapacitanceMOS CapacitanceEE1415 EECS1415 Lecture #11 CGDCGSCSBCDBCGBMOS CapacitancesMOS Capacitances= CGCS+ CGSO= CGCD+ CGDO= CGCB= CdiffGSDB= CdiffEE1416 EECS1416 Lecture #11 Gate CapacitanceGate Capacitance Capacitance (per area) from gate across the oxide is W L Cox, where Cox= ox/toxEE1417 EECS1417 Lecture #11 Gate CapacitanceGate Capacitance Distribution between terminals is complex Capacitance is really distributed Useful models lump it to the terminals Several operating regions.

MOS Transistor as a Switch Saw that real transistors aren’t exactly resistors Look more like current sources in saturation Two questions: Which region of IV curve determines delay? How can that match up with the RC model? EE141 29 EECS141 Lecture #11 29 Transistor Driving a Capacitor • With a step input: ID VDS VDD /2 VDD VDD ÆVDD/2 VGS ...

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