Transcription of LOR and PMGI Resists - MicroChem
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LOR and pmgi Resists DESCRIPTION LOR and pmgi Resists are based onpolydimethylglutarimide. Its unique properties enableLOR and pmgi products to perform exceptionally wellwhen used, either as a sacrificial layer, or as an undercutlayer in bi-layer lift-off processing. LOR and pmgi resistsare designed for applications requiring high resolutionimaging, easy process tuning, high yields and superiordeposition line width control. Mainstream applicationsutilizing LOR or pmgi Resists include GMR & MR heads,wireless devices, opto-electronics, MEMs, and 1: SFG2 w/TOK Resist 80 nmline BENEFITS Sub m lift-off processing.
LOR and PMGI Resists DESCRIPTION LOR and PMGI resists are based on polydimethylglutarimide. Its unique properties enable LOR and PMGI products to perform exceptionally well
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