Transcription of MBRF20100CT - Switch-Mode Schottky Power Rectifier
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MBRF20100CT - Switch-Mode Schottky Power Rectifier
Semiconductor Components Industries, LLC, 2016 October, 2019 Rev. 111 Publication Order Number: MBRF20100CT /DSwitch-mode SchottkyPower RectifierMBRF20100 CTGThe switch mode Power Rectifier employs the Schottky Barrierprinciple in a large area metal to silicon Power of the art geometry features epitaxial construction with oxidepassivation and metal overlay contact. Ideally suited for use asrectifiers in very low voltage, high frequency switching powersupplies, free wheeling diodes and polarity protection Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V 0 @ in Electrically Isolated.
MBRF20100CTG www.onsemi.com 2 MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
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