MBRF20100CT - Switch-Mode Schottky Power Rectifier

1 Semiconductor Components Industries, LLC, 2016 October, 2019 Rev. 111 Publication Order Number: MBRF20100CT /DSwitch-mode SchottkyPower RectifierMBRF20100 CTGThe switch mode Power Rectifier employs the Schottky Barrierprinciple in a large area metal to silicon Power of the art geometry features epitaxial construction with oxidepassivation and metal overlay contact. Ideally suited for use asrectifiers in very low voltage, high frequency switching powersupplies, free wheeling diodes and polarity protection Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V 0 @ in Electrically Isolated.

2 No Isolation Hardware Required. These are Pb Free DevicesMechanical Characteristics: Case: Epoxy, Molded Weight: Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead Temperature for Soldering Purposes:260 C Max. for 10 SecondsSCHOTTKY BARRIERRECTIFIER20 AMPERES, 100 220 FULLPAKtCASE 221 DSee detailed ordering and shipping information in the packagedimensions section on page 3 of this data AND MARKING RATINGS (Per Leg)RatingSymbolValueUnitPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageVRRMVRWMVR100 VAverage Rectified Forward Current(Rated VR), TC = 133 CTotal DeviceIF(AV)1020 APeak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 133 CIFRM20 ANon repetitive Peak Surge Current(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

3 IFSM150 APeak Repetitive Reverse Surge Current ( ms, kHz) Junction and Storage Temperature Range (Note 1)TJ, Tstg 65 to +175 CVoltage Rate of Change (Rated VR)dv/dt10000V/msRMS Isolation Voltage (t = second, 30%, TA = 25 C) (Note 2)Viso14500 VStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be CHARACTERISTICS (Per Leg)RatingSymbolValueUnitMaximum Thermal Resistance, Junction to C/WLead Temperature for Soldering Purposes: 1/8 from Case for 5 SecondsTL260 CELECTRICAL CHARACTERISTICS (Per Leg)CharacteristicSymbolMaxUnitMaximum Instantaneous Forward Voltage (Note 3)(iF = 10 Amp, TC = 25 C)(iF = 10 Amp, TC = 125 C)(iF = 20 Amp, TC = 25 C)(iF = 20 Amp, TC = 125 C) Instantaneous Reverse Current (Note 3)(Rated DC Voltage, TC = 25 C)(Rated DC Voltage, TC = 125 C) The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1 Proper strike and creepage distance must be Pulse Test: Pulse Width = 300 ms, Duty Cycle 1.

4 Typical Forward Voltage Per DiodeFigure 2. Typical Reverse Current Per , REVERSE VOLTAGE (VOLTS)IR, REVERSE CURRENT (mA)TJ = 150 CTJ = 125 CTJ = 100 CTJ = 25 , INSTANTANEOUS VOLTAGE (VOLTS) , INSTANTANEOUS FORWARD CURRENT (AMPS)TJ = 25 C100 C150 220 AYWWB20100 GAKAMARKING DIAGRAMSB20100 = Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb Free PackageAKA= Polarity DesignatorORDERING INFORMATIOND evicePackageShipping MBRF20100 CTGTO 220(Pb Free)50 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 220 FULLPAKCASE 221D 03 ISSUE KDATE 27 FEB 2009 STYLE 4:PIN 1.

5 CATHODE2. ANODE3. CATHODESTYLE 1:PIN 1. GATE2. DRAIN3. SOURCESTYLE 2:PIN 1. BASE2. COLLECTOR3. EMITTERSTYLE 3:PIN 1. ANODE2. CATHODE3. 5:PIN 1. CATHODE 2. ANODE 3. GATESTYLE 6:PIN 1. MT 1 2. MT 2 3. GATESEATINGPLANE T UCSJRSCALE 1:1 NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: INCH3. 221D-01 THRU 221D-02 OBSOLETE, NEWSTANDARD = Specific Device CodeG= Pb Free PackageA= Assembly LocationY= YearWW= Work WeekxxxxxxGAYWWA= Assembly LocationY= YearWW= Work Weekxxxxxx= Device CodeG= Pb Free PackageAKA= Polarity DesignatorAYWW xxxxxxGAKAB ipolarRectifier B Y GNDLKHAFQ3 ( )YMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein.

6 ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1TO 220 FULLPAK Semiconductor Components Industries, LLC, Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

7 A listing of ON Semiconductor s product/patentcoverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor.

8 Typical parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customerapplication by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body.

9 Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any ORDERING INFORMATIONTECHNICAL SUPPORTN orth American Technical Support:Voice Mail: 1 800 282 9855 Toll Free USA/CanadaPhone: 011 421 33 790 2910 LITERATURE FULFILLMENT:Email Requests to: Semiconductor Website: , Middle East and Africa Technical Support:Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative