BCP56T1 - NPN Silicon Epitaxial Transistor

1 bcp56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT 223. package, which is designed for medium power surface mount applications. Features MEDIUM POWER NPN Silicon . High Current: A. HIGH CURRENT Transistor . The SOT 223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the SURFACE MOUNT. possibility of damage to the die Available in 12 mm Tape and Reel COLLECTOR 2,4. Use BCP56T1G to Order the 7 inch/1000 Unit Reel Use BCP56T3G to Order the 13 inch/4000 Unit Reel PNP Complement is BCP53T1G BASE. 1. S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 EMITTER 3. Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS. Compliant 4. 12. MAXIMUM RATINGS (TC = 25 C unless otherwise noted) 3.

2 Rating Symbol Value Unit SOT 223. CASE 318E. Collector Emitter Voltage VCEO 80 Vdc STYLE 1. Collector Base Voltage VCBO 100 Vdc Emitter Base Voltage VEBO 5 Vdc MARKING DIAGRAM. Collector Current IC 1 Adc Collector Current Peak (Note 1) ICM 2 Adc AYW. Total Power Dissipation PD XXXXXG. @ TA = 25 C (Note 2) W G. Derate above 25 C 12 mW/ C 1. Operating and Storage TJ, Tstg 65 to 150 C XXXXX = Specific Device Code Temperature Range A = Assembly Location Y = Year THERMAL CHARACTERISTICS. W = Work Week Characteristic Symbol Max Unit G = Pb Free Package (Note: Microdot may be in either location). Thermal Resistance, RqJA C/W. Junction to Ambient (surface mounted). ORDERING INFORMATION. Maximum Temperature for TL See detailed ordering, marking and shipping information in the Soldering Purposes 260 C package dimensions section on page 5 of this data sheet. Time in Solder Bath 10 Sec Stresses exceeding those listed in the Maximum Ratings table may damage the device.

3 If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Reference SOA curve. 2. Device mounted on a FR 4 glass epoxy printed circuit board in x in x in; mounting pad for the collector lead = sq in. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2018 Rev. 14 BCP56T1 /D. bcp56 Series ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted). Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS. Collector Base Breakdown Voltage V(BR)CBO 100 Vdc (IC = 100 mAdc, IE = 0). Collector Emitter Breakdown Voltage V(BR)CEO 80 Vdc (IC = mAdc, IB = 0). Emitter Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 mAdc, IC = 0). Collector Base Cutoff Current ICBO 100 nAdc (VCB = 30 Vdc, IE = 0). Emitter Base Cutoff Current IEBO 10 mAdc (VEB = Vdc, IC = 0). ON CHARACTERISTICS (Note 3). DC Current Gain hFE . (IC = mA, VCE = V) All Part Types 25 . (IC = 150 mA, VCE = V) bcp56 40 250.

4 bcp56 10 63 160. bcp56 16 100 250. (IC = 500 mA, VCE = V) All Types 25 . Collector Emitter Saturation Voltage VCE(sat) Vdc (IC = 500 mAdc, IB = 50 mAdc). Base Emitter On Voltage VBE(on) Vdc (IC = 500 mAdc, VCE = Vdc). SWITCHING CHARACTERISTICS. Rise Time tr 14 ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA). Delay Time td 9 ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA). Storage Time ts 714 ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA, IB2 = 15 mA). Fall Time tf 58 ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA, IB2 = 15 mA). DYNAMIC CHARACTERISTICS. Current Gain Bandwidth Product fT 130 MHz (IC = 10 mAdc, VCE = Vdc, f = 35 MHz). Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2. bcp56 Series TYPICAL ELECTRICAL CHARACTERISTICS.

5 1000. VCE = 2 V. hFE, DC CURRENT GAIN. TA = 150 C. 125 C. 25 C. 100 - 55 C. - 65 C. 10. 1 10 100 1000. IC, COLLECTOR CURRENT (mA). Figure 1. DC Current Gain T CURRENT GAIN BANDWIDTH PRODUCT (MHz). 1000 80. 60. TJ = 25 C. 40. C, CAPACITANCE (pF). Cibo 20. 100. 10. Cobo 10 f , 10 100 1000 10 20 50 100. IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS). Figure 2. Current Gain Bandwidth Product Figure 3. Capacitance 1 IC/IB = 10 IC/IB = 10. VCE(sat), COLLECTOR EMITTER. 150 C. SATURATION VOLTAGE (V). SATURATION VOLTAGE (V). VBE(sat), BASE EMITTER. 25 C. 55 C. 55 C 25 C. 150 C. 1 1. IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A). Figure 4. Collector Emitter Saturation Voltage Figure 5. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current 3. bcp56 Series TYPICAL ELECTRICAL CHARACTERISTICS. VBE(on), BASE EMITTER VOLTAGE (V). VCE , COLLECTOR EMITTER VOLTAGE (VOLTS). VCE = 2 V TJ = 25 C. 55 C. IC = 10 mA 50 100 mA 250 mA 500 mA.

6 MA. 25 C. 150 C. 0. 1 10 20 50. IB, BASE CURRENT (mA). IC, COLLECTOR CURRENT (A). Figure 6. Base Emitter Voltage vs. Collector Figure 7. Collector Saturation Region Current 1 1 mS. IC, COLLECTOR CURRENT (A). 1S. PD, POWER DISSIPATION (W). 100 mS 10 mS 1 10 100 0 20 40 60 80 100 120 140 160. VCE, COLLECTOR EMITTER VOLTAGE (V) TA, AMBIENT TEMPERATURE ( C). Figure 8. Safe Operating Area Figure 9. Power Derating Curve 4. bcp56 Series ORDERING INFORMATION. Device Marking Package Shipping . BCP56T1G BH SOT 223 1000 / Tape & Reel (Pb Free). SBCP56T1G*. BCP56T3G BH SOT 223 4000 / Tape & Reel (Pb Free). SBCP56T3G*. bcp56 10T1G BH 10 SOT 223 1000 / Tape & Reel (Pb Free). SBCP56 10T1G*. bcp56 10T3G BH 10 SOT 223 4000 / Tape & Reel (Pb Free). NSVBCP56 10T3G*. bcp56 16T1G BH 16 SOT 223 1000 / Tape & Reel (Pb Free). SBCP56 16T1G*. bcp56 16T3G BH 16 SOT 223 4000 / Tape & Reel (Pb Free). SBCP56 16T3G*. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

7 *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable. 5. bcp56 Series PACKAGE DIMENSIONS. SOT 223 (TO 261). CASE 318E 04. ISSUE N. D. b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME , 1994. 2. CONTROLLING DIMENSION: INCH. 4 MILLIMETERS INCHES. DIM MIN NOM MAX MIN NOM MAX. HE E A 1 2 3 A1 b b1 c b D E e1 e e e1 L . C L1 q HE A q 0 10 0 10 . (0003) STYLE 1: A1 L PIN 1. BASE. L1. 2. COLLECTOR. 3. EMITTER. 4. COLLECTOR. SOLDERING FOOTPRINT*. SCALE 6:1 inches mm . *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

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