BSS138 N-Channel Logic Level Enhancement Mode …

1 2005 Semiconductor Components Industries, LLC. September-2017, Rev. 3 Publication Order Number: BSS138 /DBSS138 N-Channel Logic Level Enhancement Mode field effect TransistorGeneral Description These N-Channel Enhancement mode field effect transistors are produced using ON Semicondcutor s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features A, 50 V. RDS(ON) = @ VGS = 10 VRDS(ON) = @ VGS = V High density cell design for extremely low RDS(ON) Rugged and Reliable Compact industry standard SOT-23 surface mountpackageGDSSOT-23 DSGA bsolute Maximum Ratings TA=25oC unless otherwise notedSymbolParameterRatings UnitsVDSSD rain-Source Voltage50 VVGSSGate-Source Voltage 20V ID Drain Current Continuous (Note 1) Power Dissipation (Note 1) PD Derate Above 25 C mW/ C TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 CTL Maximum Lead Temperature for Soldering Purposes, 1/16 from Case for 10 Seconds 300 CThermal Characteristics R JA Thermal Resistance, Junction-to-Ambient (Note 1)

2 350 C/WPackage Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity SS BSS138 7 8mm 3000 units BSS138 Characteristics TA = 25 C unless otherwise noted SymbolParameterTest Conditions Min Typ Max Units Off Characteristics BVDSS Drain Source Breakdown Voltage VGS = 0 V, ID = 250 A 50V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A,Referenced to 25 C 72mV/ C IDSS Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V A VDS = 50 V, VGS = 0 V TJ = 125 C 5 A VDS = 30 V, VGS = 0 V 100 nA IGSSGate Body = 20 V, VDS = 0 V 100nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA VGS(th) TJ Gate Threshold Voltage Temperature Coefficient ID = 1 mA,Referenced to 25 C 2mV/ C RDS(on) Static Drain Source On Resistance VGS = 10 V, ID = A VGS = V, ID = A VGS = 10 V, ID = A, TJ = 125 C ID(on)

3 On State Drain Current VGS = 10 V, VDS = 5 V A gFSForward Transconductance VDS = 10V, ID = A S Dynamic Characteristics Ciss Input Capacitance 27pF Coss Output Capacitance 13pF Crss Reverse Transfer Capacitance VDS = 25 V, V GS = 0 V, f = MHz 6 pF RGGate ResistanceVGS = 15 mV, f = MHz 9 Switching Characteristics (Note 2) td(on) Turn On Delay Time 5 ns trTurn On Rise Time 9 18 nstd(off)Turn Off Delay Time 20 36 nstf Turn Off Fall Time VDD = 30 V, ID = A, VGS = 10 V, RGEN = 6 7 14 ns Qg Total Gate Charge nC QgsGate Source Charge nCQgdGate Drain ChargeVDS = 25 V, ID = A, VGS = 10 V nC Drain Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain Source Diode Forward Current A VSD Drain Source Diode Forward Voltage VGS = 0 V, IS = A(Note 2) V Notes: 1.

4 R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. a) 350 C/W when mounted on a minimum Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle BSS138 Typical Characteristics , DRAIN TO SOURCE VOLTAGE (V)ID, DRAIN CURRENT (A)VGS = , DRAIN CURRENT (A)RDS(ON), NORMALIZEDDRAIN-SOURCE ON-RESISTANCEVGS = 10 VFigure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. , JUNCTION TEMPERATURE (oC)RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCEID = 220mAVGS = , GATE TO SOURCE VOLTAGE (V)RDS(ON), ON-RESISTANCE (OHM)ID = 110mATA = 125oCTA = 25oCFigure 3.

5 On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. , GATE TO SOURCE VOLTAGE (V)ID, DRAIN CURRENT (A)TA = -55oC25oC125oCVDS = , BODY DIODE FORWARD VOLTAGE (V)IS, REVERSE DRAIN CURRENT (A)VGS = 0 VTA = 125oC25oC-55oCFigure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. BSS138 Characteristics , GATE CHARGE (nC)VGS, GATE-SOURCE VOLTAGE (V)ID = 220mAVDS = 8V25V30V0204060801000 1020304050 VDS, DRAIN TO SOURCE VOLTAGE (V)CAPACITANCE (pF)CISSCOSSCRSSf = 1 MHzVGS = 0 VFigure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. , DRAIN-SOURCE VOLTAGE (V)ID, DRAIN CURRENT (A)DC1s100ms100 sRDS(ON) LIMITVGS = 10 VSINGLE PULSER JA = 350oC/WTA = , TIME (sec)P(pk), PEAK TRANSIENT POWER (W)SINGLE PULSER JA = 350 C/WTA = 25 CFigure 9.

6 Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. , TIME (sec)r(t), NORMALIZED EFFECTIVE TRANSIENTTHERMAL RESISTANCER JA(t) = r(t) * R JAR JA = 350oC/WTJ - TA = P * R JA(t)Duty Cycle, D = t1 / t2P(pk)t1t2 SINGLE = 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patentcoverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards.

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