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UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A npn silicon TRANSISTOR 1 of 5 Copyright 2017 UNISONIC TECHNOLOGIES Co., Ltd NPN EPITAXIAL silicon TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 SIP-3 SOT-223 SOT-8911TO-9211TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Plating Halogen-Free Package 1 2 3 Packing 2SD1616L-x-AA3-B 2SD1616G-x-AA3-B SOT-223 B C E Tape Reel2SD1616L-x-AB3-R 2SD1616G-x-AB3-R SOT-89 B C E Tape Reel2SD1616L-x-G03-K 2SD1616G-x-G03-K SIP-3 E C B Bulk 2SD1616L-x-T92-B 2SD1616G-x-T92-B TO-92 E C B

2sd1616/a npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r201-008.i marking marking package 2sd1616 2sd1616a sot-223 sot-89 2sd1616 ...

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Transcription of UNISONIC TECHNOLOGIES CO., LTD

1 UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A npn silicon TRANSISTOR 1 of 5 Copyright 2017 UNISONIC TECHNOLOGIES Co., Ltd NPN EPITAXIAL silicon TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 SIP-3 SOT-223 SOT-8911TO-9211TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Plating Halogen-Free Package 1 2 3 Packing 2SD1616L-x-AA3-B 2SD1616G-x-AA3-B SOT-223 B C E Tape Reel2SD1616L-x-AB3-R 2SD1616G-x-AB3-R SOT-89 B C E Tape Reel2SD1616L-x-G03-K 2SD1616G-x-G03-K SIP-3 E C B Bulk 2SD1616L-x-T92-B 2SD1616G-x-T92-B TO-92 E C B

2 Tape Box 2SD1616L-x-T92-K 2SD1616G-x-T92-K TO-92 E C B Bulk 2SD1616L-x-T9S-K 2SD1616G-x-T9S-K TO-92SP E C B Bulk 2SD1616AL-x-AA3-R 2SD1616AG-x-AA3-R SOT-223 B C E Tape Reel2SD1616AL-x-AB3-R 2SD1616AG-x-AB3-R SOT-89 B C E Tape Reel2SD1616AL-x-G03-K 2SD1616AG-x-G03-K SIP-3 E C B Bulk 2SD1616AL-x-T92-B 2SD1616AG-x-T92-B TO-92 E C B Tape Box 2SD1616AL-x-T92-K 2SD1616AG-x-T92-K TO-92 E C B Bulk 2SD1616AL-x-T9S-K 2SD1616AG-x-T9S-K TO-92SP E C B Bulk Note: Pin Assignment: C: Collector B: Base E: Emitter 2SD1616/A npn silicon TRANSISTOR UNISONIC TECHNOLOGIES CO.

3 , LTD 2 of 5 MARKING MARKING PACKAGE 2SD1616 2SD1616A SOT-223 SOT-89 2SD1616 Date CodeL: Lead FreeG: Halogen Free1 2SD1616 ADate CodeL: Lead FreeG: Halogen Free1 SIP-3 TO-92 TO-92SP 2SD1616/A npn silicon TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 5 ABSOLUTE MAXIMUM RATINGS (TA=25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 2SD1616 60 Collector to Base Voltage 2SD1616A VCBO 120 V 2SD1616 50 Collector to Emitter Voltage 2SD1616A VCEO 60 V Emitter to Base Voltage VEBO 6 V DC IC 1

4 A Collector Current Pulse(Note2) ICM 2 A SOT-223 800 mW SOT-89 500 mW SIP-3 400 mW Total Power Dissipation

5 TO-92/TO-92 SPPC 750 mW Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width 10ms, Duty cycle<50%. ELECTRICAL CHARACTERISTICS (TA=25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITC ollector-Emitter Saturation Voltage VCE (SAT) IC=1A, IB=50mA Base-Emitter Saturation Voltage VBE (SAT) IC=1A, IB=50mA Base Emitter On Voltage VBE (ON)

6 VCE =2V, IC =50mA 600 640 700mVCollector Cut-Off Current ICBO VCB=60V 100nA Emitter Cut-Off Current IEBO VEB= 6V 100nA hFE1 VCE =2V, IC =100mA 135 600 DC Current Gain hFE2 VCE =2V, IC=1A 81 Transition Frequency fT VCE =2V, IC =100mA 100 160 MHzOutput Capacitance Cob VCB =10V, f =1 MHz 19 pF Turn On Time tON VCE =10V, IC =100mA s Storage Time tSTG IB1 = -IB2 =10mA s Fall Time tF VBE(OFF) = -2 ~ -3V s CLASSIFICATION OF hFE1 RANK Y G L hFE1 135 ~ 270 200 ~ 400 300 ~ 600 2SD1616/A npn silicon TRANSISTOR UNISONIC TECHNOLOGIES CO.

7 , LTD 4 of 5 TYPICAL CHARACTERISTICS Collector Output CapacitanceCollector-Base Voltage, VCB(V)Capacitance, Cob(pF)1000500300100503010531351030 50 100300IE=0f= Gain-Bandwidth ProductCollector Current, IC(A)Current Gain-Bandwidth Product, fT(MHz) Switching TimeCollector Current, IC(A) IB1= -10 2SD1616/A npn silicon TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 5 of 5 TYPICAL CHARACTERISTICS(Cont.) DC Current GainCollector Current, IC(A) Current Gain, 5 VCE=2 VBase-Emitter Saturation VoltageCollector-Emitter Saturation VoltageCollector Current, IC(A) 5IC=20 IBSaturation Voltage, VCE (SAT), VBE (SAT), (V) (SAT)VBE (SAT) Collector Current, IC(A)200msDC2SD1616A2SD1616 Power Dissipation, PD(W) UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein.

8 UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice.


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