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Measuring Power MOSFET Characteristics

Document Number: : 18-Nov-101 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SILICONIXP ower MOSFETsApplication Note AN-957 Measuring Power MOSFET CharacteristicsAPPLICATION NOTETABLE OF CONTENTSPage1. General Information .. 22. BVDSS .. 33. IDSS .. 34. VGS(th) .. 35. 46. 47. RDS(on) .. 58. 59. Composite Characteristics .. 610. Transfer Characteristics .. 611. Measurement of Power MOSFET Characteristics without a Curve Tracer .. 612. A Fixture to Speed-up Testing Time .. 9 This application note describes methods for Measuring Power MOSFET Characteristics , both with a curve tracer and withspecial-purpose test circuits. Measuring Power MOSFET Characteristics Number: 907152 Revision: 18-Nov-10 This document is subject to change without notice.

the Kelvin connections, as indicated in the instructions for the curve tracer. This is particularly important for power semiconductors, as inductive and resistive drops across sockets and wiring are significant. Some tests require the use of high voltages. After the device is mounted in the test fixture as described for each test, the

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