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Measuring Power MOSFET Characteristics

Document Number: : 18-Nov-101 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SILICONIXP ower MOSFETsApplication Note AN-957 Measuring Power MOSFET CharacteristicsAPPLICATION NOTETABLE OF CONTENTSPage1. General Information .. 22. BVDSS .. 33. IDSS .. 34. VGS(th) .. 35. 46. 47. RDS(on) .. 58. 59. Composite Characteristics .. 610. Transfer Characteristics .. 611. Measurement of Power MOSFET Characteristics without a Curve Tracer .. 612. A Fixture to Speed-up Testing Time .. 9 This application note describes methods for Measuring Power MOSFET Characteristics , both with a curve tracer and withspecial-purpose test circuits.

The Power MOSFET used in all the examples is the IRF630. The controlsettings given in the examples are those suitable for the IRF630. The user must modify these values appropriately when testing adifferent device. The IRF630 was selected since it is a typical mid-range device with a voltage rating of 200 V and acontinuous current rating of 9 A

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