Transcription of Measuring Power MOSFET Characteristics
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Measuring Power MOSFET Characteristics
Document Number: : 18-Nov-101 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SILICONIXP ower MOSFETsApplication Note AN-957 Measuring Power MOSFET CharacteristicsAPPLICATION NOTETABLE OF CONTENTSPage1. General Information .. 22. BVDSS .. 33. IDSS .. 34. VGS(th) .. 35. 46. 47. RDS(on) .. 58. 59. Composite Characteristics .. 610. Transfer Characteristics .. 611. Measurement of Power MOSFET Characteristics without a Curve Tracer .. 612. A Fixture to Speed-up Testing Time .. 9 This application note describes methods for Measuring Power MOSFET Characteristics , both with a curve tracer and withspecial-purpose test circuits.
• A fixture to speed-up testing time • Related topics 1. GENERAL Curve tracers have generally been designed for making measurements on bipolar transistors. While Power MOSFETs can betested satisfacto rily on most curve tracers, the controls of these instruments are generally labeled with reference to bipolar transistor s, and the procedure ...
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