Transcription of MOSFET Device Physics and Operation
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MOSFET Device Physics and Operation
1 MOSFET Device Physicsand INTRODUCTIONA field effect transistor (FET) operates as a conducting semiconductor channel with twoohmic contacts thesourceand thedrain where the number of charge carriers in thechannel is controlled by a third contact thegate. In the vertical direction, the gate-channel-substrate structure (gate junction)can be regarded as an orthogonal two-terminaldevice, which is either a MOS structure or a reverse-biased rectifying Device that controlsthe mobile charge in the channel by capacitive coupling (field effect). Examples of FETsbased on these principles are metal-oxide-semiconductor FET ( MOSFET ), junction FET(JFET), metal-semiconductor FET (MESFET), and heterostructure FET (HFETs). In allcases, the stationary gate-channel impedanceis very large at normal operating basic FET structure is shown schematically in Figure most important FET is the MOSFET .
becomes so large that the energy difference between the Fermi level and the bottom of the conduction band at the insulator–semiconductor interface becomes smaller than that between the Fermi level and the top of the valence band. This is the case indicated for V = 0V in Figure 1.3(a). Carrier statistics tells us that the electron ...
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