Transcription of MOSFET Device Physics and Operation
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MOSFET Device Physics and Operation
1 MOSFET Device Physicsand INTRODUCTIONA field effect transistor (FET) operates as a conducting semiconductor channel with twoohmic contacts thesourceand thedrain where the number of charge carriers in thechannel is controlled by a third contact thegate. In the vertical direction, the gate-channel-substrate structure (gate junction)can be regarded as an orthogonal two-terminaldevice, which is either a MOS structure or a reverse-biased rectifying Device that controlsthe mobile charge in the channel by capacitive coupling (field effect). Examples of FETsbased on these principles are metal-oxide-semiconductor FET ( MOSFET ), junction FET(JFET), metal-semiconductor FET (MESFET), and heterostructure FET (HFETs). In allcases, the stationary gate-channel impedanceis very large at normal operating basic FET structure is shown schematically in Figure most important FET is the MOSFET .
potential as follows using equilibrium statistics, p s = N a exp(−ψ s/V th), (1.3) n s = n2 i /p s = n po exp(ψ s/V th), (1.4) where n po = n2 i /N a is the equilibrium concentration of the minority carriers (electrons) in the bulk. The potential distribution ψ(x)in the semiconductor can be determined from a solution of the one-dimensional ...
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