Transcription of MOSFET Device Physics and Operation
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MOSFET Device Physics and Operation
1 MOSFET Device Physicsand INTRODUCTIONA field effect transistor (FET) operates as a conducting semiconductor channel with twoohmic contacts thesourceand thedrain where the number of charge carriers in thechannel is controlled by a third contact thegate. In the vertical direction, the gate-channel-substrate structure (gate junction)can be regarded as an orthogonal two-terminaldevice, which is either a MOS structure or a reverse-biased rectifying Device that controlsthe mobile charge in the channel by capacitive coupling (field effect). Examples of FETsbased on these principles are metal -oxide-semiconductor FET ( MOSFET ), junction FET(JFET), metal -semiconductor FET (MESFET), and heterostructure FET (HFETs). In allcases, the stationary gate-channel impedanceis very large at normal operating basic FET structure is shown schematically in Figure most important FET is the MOSFET .
work functions of the metal and the semiconductor. This band bending changes with the applied bias and the bands become flat when we apply the so-called flat-band voltage given by V FB = (m − s)/q = (m −X s −E c +E F)/q, (1.1) where m and s are the work functions of the metal and the semiconductor, respectively, X s is the electron ...
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