Transcription of 電力電子元件簡介 - 清華大學電機系-NTHUEE
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電力電子元件簡介 - 清華大學電機系-NTHUEE
Introduction to Power Electronic Devices C. M. Liaw Department of Electrical Engineering National Tsing Hua University Hsinchu, Taiwan, ROC.. ( Power diode) ( SCR). Power diode SCR. AC P. AC. source source Load Load Firing circuit Diode: Uncontrolled turn-on and SCR: Controlled turn-on and turn-off uncontrolled turn-off .. Page 1. ( ). Voltage/current ratings Switching frequency (speed). Switching time On-state resistance (or on-state voltage/current).. (A) (Thyristor) (Silicon Controlled . Rectifier, SCR) : Controlled turn-on, uncontrolled turn-off (B) (Bidirectional Thyristor TRIAC). (C) GTO (Gate Turn-off Thysistor). (D) (Integrated Gate-Commutated Thyristor, IGCT): It is introduced by ABB in 1997. It is a high-voltage, hard-driven, asymmetrical-blocking GTO with unity gain. The gate drive circuit is built-in on the device module. (E) (Power BJT) : Current control device (F) IGBT (Insulated Gate Bipolar Transistor): - Combines the conduction characteristic of BJT and the control characteristic of the MOSFET.
Page 2 常用功率半導體元件之額定(表二) Voltage/current ratings Switching frequency (speed) Switching time On-state resistance (or on-state voltage/current)
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