Transcription of Optics for EUV Lithography
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Optics for EUV LithographyJune 13th, 2018 Berkeley, CA, USADr. Sascha Migura, Carl Zeiss SMT GmbH,Oberkochen, Germany2018 EUVL Workshop2 Carl Zeiss SMT GmbH, Sascha Migura 2018 EUVL WorkshopJune 13th, 2018 Ernst Abbe in 1873k1is process factor is wavelengthNAis numerical apertureMoore s Law drivestherequirementson resolutionoftheopticalsystemdeterminesth eminimumfeaturesizeon a Zeiss SMT GmbH, Sascha Migura 2018 EUVL WorkshopJune 13th, 2018100080060035025018013090654532221611 868890929496980002040812141610061718 Design rule / Resolution(nm)Increasing sequence down NA up k1downhas been repeated several times during the last 25 Zeiss SMT GmbH, Sascha Migura 2018 EUVL WorkshopJune 13th, 2018intermediate focuscollectorreticle (mask)
Optics for EUV Lithography have evolved over three decades to a level where excellent imaging is demonstrated. Right now, the Starlith ® 3400 Optics extends EUV Lithography to 13nm single-shot resolution with high productivity for serial production. High-NA EUV Lithography enables further shrink for the
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