Transcription of P-Channel 1.25-W, 2.5-V MOSFET - Vishay
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P-Channel 1.25-W, 2.5-V MOSFET - Vishay
Si2301 DSVishay SiliconixDocument Number: 70627S-31990 Rev. E, , MOSFETPRODUCT SUMMARYVDS (V)rDS(on) (W)ID (A) @ VGS = - V- @ VGS = - V- (SOT-23)SDTop View231Si2301DS (A1)**Marking CodeOrdering Information: Si2301DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)ParameterSymbolLimitUnitDrain-Sour ce VoltageVDS-20 VGate-Source VoltageVGS"8 VContinuous Drain Current (TJ = 150_C)bTA= 25_CID- Drain Current (TJ = 150_C)bTA= 70_CID- Drain CurrentaIDM-10 AContinuous Source Current (Diode Conduction)bIS- DissipationbTA= DissipationbTA= Junction and Storage Temperature RangeTJ, Tstg- 55 to 150_CTHERMAL RESISTANCE RATINGSP arameterSymbolLimitUnitMaximum Junction-to-AmbientbR100_C/WMaximum Junction-to-AmbientcRthJA166_ width limited by maximum junction Mounted on FR4 Board, t v 5 Mounted on FR4 SPICE model information via the Worldwide Web: Number.
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