Transcription of P2N2222A - Amplifier Transistors
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Semiconductor Components Industries, LLC, 2013 January, 2013 Rev. 71 Publication Order Number: P2N2222A /DP2N2222 AAmplifier TransistorsNPN SiliconFeatures These are Pb Free Devices*MAXIMUM RATINGS (TA = 25 C unless otherwise noted)CharacteristicSymbolValueUnitColle ctor Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO75 VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied.
P2N2222A http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter ...
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