Transcription of PD-91279E IRF3205
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PD-91279E IRF3205
IRF3205 HEXFET Power MOSFET01/25/01 Absolute Maximum JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunction-to-Ambient 62 Thermal = 55 VRDS(on) = ID = 110A SDGTO-220 ABAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFET sare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts.
IRF3205 6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IG ID 3mA VGS.3µF 50KΩ 12V .2µF Current Regulator Same Type as D.U.T. Current Sampling Resistors +-10 V Fig 13a.
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