Transcription of PLASMA RIE ETCHING FUNDAMENTALS AND ...
{{id}} {{{paragraph}}}
Example: air traffic controller
PLASMA RIE ETCHING FUNDAMENTALS AND ...
PLASMA RIE Birck ETCHING . Nanotechnology Center FUNDAMENTALS AND APPLICATIONS. 1. O tli Outline 1 Introductory Concepts 1. 2. PLASMA FUNDAMENTALS 3. The Physics and Chemistry of Plasmas 4 Anisotropy 4. A i t Mechanisms M h i g of Si and its Compounds 5. The ETCHING p 6. The ETCHING of Other Materials 2. DEFINITIONS. Electron ((e-). Positive ion (Ar+, Cl+, SiF4+, CF3+). Positive ion mass in RIEs >>mass of electron Radical (F, Cl, O, CF3). Uncharged atoms with unsatisfied chemical bonding 3. DEFINITIONS (continued). ( ti d). Mean free ppath average g distance a pparticle travels before collisions 5. ((cm cm) ((Dependent p on the species). p ). P (mT ). Pressure 1atmosphere= 760 Torr = 1*105 Pascals Pumping speed (S) [liters/sec].))
Wh High Densit Plasmas?Why High Density Plasmas? ¾Lower ion bombardment energies improve selectivity and reduce ion-bombardment-induced physical damage of the wafer surface.
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: