PLASMA RIE ETCHING FUNDAMENTALS AND ...

PLASMA RIE Birck ETCHING . Nanotechnology Center FUNDAMENTALS AND APPLICATIONS. 1. O tli Outline 1 Introductory Concepts 1. 2. PLASMA FUNDAMENTALS 3. The Physics and Chemistry of Plasmas 4 Anisotropy 4. A i t Mechanisms M h i g of Si and its Compounds 5. The ETCHING p 6. The ETCHING of Other Materials 2. DEFINITIONS. Electron ((e-). Positive ion (Ar+, Cl+, SiF4+, CF3+). Positive ion mass in RIEs >>mass of electron Radical (F, Cl, O, CF3). Uncharged atoms with unsatisfied chemical bonding 3. DEFINITIONS (continued). ( ti d). Mean free ppath average g distance a pparticle travels before collisions 5.)

time Pressure RF coil power RF bias power Gas flow [sccm] Etch 858.5 sec 40 T40mTorr 2200W 40W 450 SF450 SF 6 Passivation 3 sec 14mTorr 1500W 20W 200 C 4 F 8 Etch rate ≈ 8µm/min for 500 µm feature size with ~ 20% exposed area High selectivity to PR ≈ 75-100 43

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