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PLASMA RIE ETCHING FUNDAMENTALS AND ...

PLASMA RIE Birck ETCHING . Nanotechnology Center FUNDAMENTALS AND APPLICATIONS. 1. O tli Outline 1 Introductory Concepts 1. 2. PLASMA FUNDAMENTALS 3. The physics and Chemistry of Plasmas 4 Anisotropy 4. A i t Mechanisms M h i g of Si and its Compounds 5. The ETCHING p 6. The ETCHING of Other Materials 2. DEFINITIONS. Electron ((e-). Positive ion (Ar+, Cl+, SiF4+, CF3+). Positive ion mass in RIEs >>mass of electron Radical (F, Cl, O, CF3). Uncharged atoms with unsatisfied chemical bonding 3. DEFINITIONS (continued). ( ti d). Mean free ppath average g distance a pparticle travels before collisions 5. ((cm cm) ((Dependent p on the species). p ).))

Uncharged atoms with unsatisfied chemicalUncharged atoms with unsatisfied chemical bonding 3. DEFINITIONS ( ti d)DEFINITIONS (continued) ... Plasma Fundamentals 3.3. The Physics and Chemistry of Plasmas The Physics and Chemistry of Plasmas 4. Anisotrop MechanismsAnisotropy Mechanisms 5. The Etching of Si and its Compounds

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