PLASMA RIE ETCHING FUNDAMENTALS AND ...

PLASMA RIE Birck ETCHING . Nanotechnology Center FUNDAMENTALS AND APPLICATIONS. 1. O tli Outline 1 Introductory Concepts 1. 2. PLASMA FUNDAMENTALS 3. The Physics and Chemistry of Plasmas 4 Anisotropy 4. A i t Mechanisms M h i g of Si and its Compounds 5. The ETCHING p 6. The ETCHING of Other Materials 2. DEFINITIONS. Electron ((e-). Positive ion (Ar+, Cl+, SiF4+, CF3+). Positive ion mass in RIEs >>mass of electron Radical (F, Cl, O, CF3). Uncharged atoms with unsatisfied chemical bonding 3. DEFINITIONS (continued). ( ti d). Mean free ppath average g distance a pparticle travels before collisions 5. ((cm cm) ((Dependent p on the species). p ). P (mT ). Pressure 1atmosphere= 760 Torr = 1*105 Pascals Pumping speed (S) [liters/sec]. Gas flow rate (Q) [Torr-liters/sec] or [sccm]. 4. Pl PLASMA Vacuum V S. System t Gas lines Mixed gas [Q]. valve MFC box APC & gate Chamber valve Vacuum pump [S].))

STS ASE DRIESTS ASE DRIE High etch-rate recipe: Switching time Pressure RF coil power RF bias power Gas flow [sccm] Etch 858.5 sec 40 T40mTorr 2200W 40W 450 SF450 SF 6 Passivation 3 sec 14mTorr 1500W 20W 200 C 4 F 8 Etch rate ≈ 8µm/min for 500 µm feature

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