Transcription of Power MOSFET - Vishay Intertechnology
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IRF9540, SiHF9540. Vishay Siliconix Power MOSFET . FEATURES. PRODUCT SUMMARY. Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( ) VGS = - 10 V RoHS*. P-Channel Qg (Max.) (nC) 61 COMPLIANT. 175 C Operating Temperature Qgs (nC) 14. Fast Switching Qgd (nC) 29. Ease of Paralleling Configuration Single Simple Drive Requirements S. Compliant to RoHS Directive 2002/95/EC. TO-220AB. DESCRIPTION. G Third generation Power mosfets from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 175 ° C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 91078_01 20 µs Pulse Width T C ...
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