Transcription of Power MOSFET - Vishay Intertechnology
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Power MOSFET - Vishay Intertechnology
Document Number: B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRFP260, SiHFP260 Vishay SiliconixFEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/ECDESCRIPTIONT hird generation Power mosfets from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance TO-247AC package is preferred forcommercial-industrial applications where higher powerlevels preclude the use of TO-220AB devices.
Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode-- 46 A Pulsed Diode Forward Currenta ISM - - 180 Body Diode Voltage VSD TJ = 25 °C, IS = 46 A, VGS = 0 Vb-- 1.8V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 46 A, dI/dt = 100 A/μsb - 390 590 ns Body Diode Reverse Recovery Charge ...
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