Transcription of Power MOSFET - Vishay Intertechnology
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Power MOSFET - Vishay Intertechnology
Document Number: 91291 B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRFZ44, SiHFZ44 Vishay Siliconix FEATURES Dynamic dV/dt Rating 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/ECDESCRIPTIONT hird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance TO-220AB package is universially preferred forcommercial-industrial applications at Power dissipationlevels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220AB contribute to itswide acceptance throughout the Repetitive rating; pulse width limited by maximum junction temperature (see fig.)
Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode-- 50 A Pulsed Diode Forward Currenta ISM - - 200 Body Diode Voltage VSD TJ = 25 °C, IS = 51 A, VGS = 0 Vb-- 2.5V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs - 120 180 ns Body Diode Reverse Recovery Charge ...
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