Transcription of Power MOSFET - Vishay Intertechnology
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IRF9540, SiHF9540. Vishay Siliconix Power MOSFET . FEATURES. PRODUCT SUMMARY. Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( ) VGS = - 10 V RoHS*. P-Channel Qg (Max.) (nC) 61 COMPLIANT. 175 C Operating Temperature Qgs (nC) 14. fast Switching Qgd (nC) 29. Ease of Paralleling Configuration Single Simple Drive Requirements S. Compliant to RoHS Directive 2002/95/EC. TO-220AB. DESCRIPTION. G Third generation Power mosfets from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D. G D commercial-industrial applications at Power dissipation P-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION. Package TO-220AB.
designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Configuration Single The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance
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