Transcription of Power MOSFET - Vishay Intertechnology
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IRF9540, SiHF9540. Vishay Siliconix Power MOSFET . FEATURES. PRODUCT SUMMARY. Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( ) VGS = - 10 V RoHS*. P-Channel Qg (Max.) (nC) 61 COMPLIANT. 175 C Operating Temperature Qgs (nC) 14. Fast Switching Qgd (nC) 29. Ease of Paralleling Configuration Single Simple Drive Requirements S. Compliant to RoHS Directive 2002/95/EC. TO-220AB. DESCRIPTION. G Third generation Power mosfets from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D. G D commercial-industrial applications at Power dissipation P-Channel MOSFET levels to approximately 50 W.
IRF9540 www.vishay.com Vishay Siliconix S21-0852-Rev. C, 16-Aug-2021 1 Document Number: 91078 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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