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Random Offset in CMOS IC Design - Designer’s Guide

Random Offset in CMOS IC DesignECEN4827/5827 Analog IC DesignOctober 19, 2007 Art Zirger, National to start? How do we choose what transistor sizes to use in a Design ? One topic not often discussed in classes is Random offsetand how transistor sizing affects this 2 devices (MOSFET s, resistors, capacitors) of the same size, laid out next to each other, are not identical. How they differ is generally the function of Random offsets during processing. These offsets vary from chip to chip and set a limit on precision attainable which is typically reflected as data sheet Definitions/Notation The following I-V equation for a MOSFET in saturation is used:where A mixture of Vt& VTis used where both are referring to threshold voltage, not thermal voltage()22tGSDVVI = LWCox =AgendaSystematic vs.

Oct 19, 2007 · Profile of random mismatch • Has a gaussian distribution • Can be quantified by statistical variables of: – mean: ā – standard deviation: σ a – variance: σ2 a – Mismatch is defined as occurring between elements; a single element does not have mismatch, but a “self mismatch” can be defined.

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