Transcription of S6203 : SiC Power Devices - Rohm
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S6203 : SiC Power Devices - Rohm
Data 2014 ROHM Co., Ltd. All rights SiC Schottky Barrier Diode Bare Die*1 Limited by Tj *2 PW= sinusoidal, Tj=25 C *3 PW=10ms square, Tj=25 C*4 PW= sinusoidal, Tj=150 C *5 Duty cycle=10%, limited by Tj AUnitValueVRIFIFSM C CTjTstg175-55 to +175lAbsolute maximum ratings (Tj = 25 C)Surge no repetitive forward currentReverse voltage (repetitive peak)Reverse voltage (DC)Continuous forward current65020*176*571*2 Range of storage temperatureRepetitive peak forward currentJunction temperature260*356*4 IFRMAS ymbollConstructionSilicon carbide epitaxial planer typeSchottky diodeParameterVVAAAVRM6503) High-speed switching possiblelInner circuit2) Reduced temperature dependencelFeatures1) Shorter recovery time650V20A*1 VRIFQC31nC(C) Cathode (A)
0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 Pulsed Ta=125ºC Ta=175ºC Ta=75ºC Ta=25ºC Ta=125ºC Ta= -25ºC 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5
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