Transcription of Schottky Barrier Diode - Rohm
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Data 2016 ROHM Co., Ltd. All rights Barrier DiodeRB522ES-30lApplicationlDimensions (Unit : mm)lLand Size Figure (Unit : mm)General rectificationlFeatureslStructure1)Small silicon package(SMD0603)2)High AccuracyManufacturing Dimensiontolerance 10mm3)Low VFlConstructionlTaping Dimensions (Unit : mm)Silicon epitaxial planar typeROHM: SMD0603 SMD0603 Anode Cathode 1 - Absolure Maximum Ratings (Ta=25oC)SymbolVRMVRIOIFSMTjTstg Electrical Characteristics (Tj=25 C)SymbolUnitVFmVIR A370 Max7500mA150 C-40 +150 CParameterConditionsNon-repetitive Forward Current Surge PeakReverse CurrentIF=10mAVR=10V60Hz half sin wave, one cycle, non-repetitiveat Ta=25 COperating Junction Temperature-Forward VoltageStorage Temperature-Reverse VoltageDirect Reverse Voltage30 VAverage forward rectified currentGlass epoxy board mounted, 60Hz half sinwave, resistive load,100mARepetitive Peak Reverse VoltageDuty 2016 ROHM Co.
, transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
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NTE586 Silicon Rectifier Diode Schottky Barrier, SS32-S310 Schottky Rectifier, SS32 - S310 — Schottky Rectifier, SCHOTTKY, Dual Series Schottky Barrier Diodes, DUAL SCHOTTKY DIODE BRIDGE, Schottky Diode, Vishay Intertechnology, BAT42, 1N5817 - 1N5819, 1N5817-1N5819, In mixed-signal systems demystified, Part, Texas Instruments