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SEMICONDUCTOR MEMORIES

Digital Integrated Circuits Prentice Hall 1995 MemorySEMICONDUCTORMEMORIESD igital Integrated Circuits Prentice Hall 1995 MemoryChapter Overview Memory Classification Memory Architectures The Memory Core Periphery ReliabilityDigital Integrated Circuits Prentice Hall 1995 MemorySemiconductor MemoryClassificationRWMNVRWMROMEPROME2 PROMFLASHR andomAccessNon-RandomAccessSRAM DRAMMask-ProgrammedProgrammable (PROM)FIFOS hift RegisterCAMLIFOD igital Integrated Circuits Prentice Hall 1995 MemoryMemory Architecture: DecodersWord 0 Word 1 Word 2 Word N-1 Word N-2 Input-OutputS0S1S2SN-2SN_1(M bits)StorageCellM bitsN WordsWord 0 Word 1 Word 2 Word N-1 Word N-2 Input-Output(M bits)StorageCellM bitsDecoderA0A1AK-1S0N words => N select signalsToo many s

Metal1 on top of diffusion Basic cell 10 λ x 7 λ 2 λ WL[0] WL[1] WL[2] WL[3] GND (diffusion) Metal1 Polysilicon Only 1 layer (contact mask) is used to program memory array Programming of the memory can be delayed to one of last process steps

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