Transcription of SiC MOSFET Benefits - STMicroelectronics
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SiC MOSFET Benefits - STMicroelectronics
SiC MOSFET Benefits Jeff Fedison Sr. Applications Engineer Agenda 2. SiC MOSFETs Overview of EV/HEV Power Electronics EV Traction Inverter Design Example Conclusion SiC MOSFET . A Real Revolution for high-voltage Power Switches Wide Bandgap Materials 4. Radical innovation for Power Electronics Si GaN 4H-SiC. Eg (eV) Band gap Vs (cm/s) Electron saturation velocity 1x107 2x107. r dielectric constant 10 Ec (V/cm) Critical electric field 3x105 k (W/cm K) thermal conductivity 5. Ec low on resistance Vs Higher switching frequency Lower switching losses Eg low leakage, high Tj k Operation > 200 C. Reduced Cooling Requirements Benefits of SiC MOSFETs 5. Key Benefits Extremely low Energy Losses and Ultra-Low RDS(on) especially at very high Tj Higher operating frequency for smaller and lighter systems Good Thermal Performance High operating temperature ( Tjmax = 200 C).
• Si IGBT device: 25A(@100°C) 1200V ST trench gate field-stop IGBT (T j-max =175°C) • SiC switching power losses are considerably lower than the IGBT ones • At high temperature, the gap between SiC and IGBT is insurmountable SiC MOSFET is the optimal fit for High Power, High Frequency and High Temperature applications SiC MOSFET
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