Transcription of SiC Power Devices and Modules - Rohm
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SiC Power Devices and Modules - Rohm
SiC Power Devices and Modules Application Note Issue of August 2014 14103 EBY01 1 Contents 1. SiC Semiconductors .. 3 Property of SiC material .. 3 Advantages of SiC material for Power device 3 2. Characteristics of SiC Schottky Barrier Diode (SBD) .. 5 Device structure and characteristics .. 5 Forward characteristics of SiC-SBD .. 5 Reverse recovery characteristics of SiC-SBD .. 6 3. Characteristics of SiC-MOSFET .. 8 Device structure and characteristics .. 8 Specific on-resistance .. 9 Vd-Id characteristics .. 10 Gate voltage Vgs to drive SiC-MOSFET and Rdson .. 10 Vg-Id characteristics .. 11 Turn-on 12 Turn-off characteristics .. 13 Internal gate resistance .. 14 Gate drive circuit .. 15 Forward characteristics of body diode and reverse conduction .. 15 Reverse recovery characteristics of body diode .. 17 4. Characteristics of SiC Power Modules .. 18 Characteristics of SiC Power module .
4 advantages of SiC’s higher breakdown field and higher carrier concentration, SiC MOSFET thus can combine all three desirable characteristics of power switch, i.e., high voltage, low on-resistance, and fast
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