Transcription of SiC Power Devices and Modules - Rohm
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SiC Power Devices and Modules - Rohm
SiC Power Devices and Modules Application Note Issue of August 2014 14103 EBY01 1 Contents 1. SiC Semiconductors .. 3 Property of SiC material .. 3 Advantages of SiC material for Power device 3 2. Characteristics of SiC Schottky Barrier Diode (SBD) .. 5 Device structure and characteristics .. 5 Forward characteristics of SiC-SBD .. 5 Reverse recovery characteristics of SiC-SBD .. 6 3. Characteristics of SiC-MOSFET .. 8 Device structure and characteristics .. 8 Specific on-resistance .. 9 Vd-Id characteristics .. 10 Gate voltage Vgs to drive SiC-MOSFET and Rdson .. 10 Vg-Id characteristics.
3 1. SiC Semiconductors 1.1 Property of SiC material SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C).
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