Transcription of SiC Power Devices and Modules - Rohm
{{id}} {{{paragraph}}}
SiC Power Devices and Modules Application Note Issue of August 2014 14103 EBY01 1 Contents 1. SiC Semiconductors .. 3 Property of SiC material .. 3 Advantages of SiC material for Power device 3 2. Characteristics of SiC schottky Barrier diode (SBD) .. 5 Device structure and characteristics .. 5 Forward characteristics of SiC-SBD .. 5 Reverse recovery characteristics of SiC-SBD .. 6 3. Characteristics of SiC-MOSFET .. 8 Device structure and characteristics .. 8 Specific on-resistance .. 9 Vd-Id characteristics .. 10 Gate voltage Vgs to drive SiC-MOSFET and Rdson .. 10 Vg-Id characteristics .. 11 Turn-on 12 Turn-off characteristics.
2. Characteristics of SiC Schottky Barrier Diode (SBD) 2.1 Device structure and characteristics SiC SBDs (Schottky barrier diodes) with breakdown voltage from 600V (which far exceeds the upper limit for silicon SBDs) and up are readily available. Compared to silicon FRDs (fast recovery diodes),
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document:
{{id}} {{{paragraph}}}