Transcription of Snubber circuit design methods - Rohm
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Snubber circuit design methods - Rohm
1/6 2017 ROHM Co., Ltd. No. 60AP001E 2020 ROHM Co., Ltd. No. 62AN037E Application Note SiC MOSFET Snubber circuit design methods SiC MOSFET is getting more popular in applications where fast and efficient switching is required, such as power supply applications. On the other hand, the fast switching capability causes high dv/dt and di/dt, which couple with stray inductance of package and surrounding circuit , resulting in large surge voltage and/or current between drain and source terminals of the MOSFET. The surge voltage and current have to be controlled to not exceed the maximum rated voltage/current of the device.
MOSFET bridge; (b) RC snubber where the resistor R SNB and capacitor C SNB are connected in parallel to each MOSFET; (c) Discharge RCD snubber, where a diode is added to RC snubber; and (d) non-discharge RCD snubber, where the discharging path is changed from the discharge RCD snubber presented in (c). -10 0 10 20 30 40 50 60-200 0 200 400 600 800
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