Transcription of Transphrom–氮化镓FET(HEMT)
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Transphrom–氮化镓FET(HEMT)
Transphrom FET(HEMT) ,HEMT: High Electron Mobility Transistor MOSFET (600 VDC, 1uS,100nS , 750V)Part NumberPackageVoltage (V)Current (A) Ron(Ohm)DescriptionTPH3245ED QFN 5* D TPH3002LD QFN 8* D TPH3002LS QFN 8* S TPH3002PD D TPH3002PS S TPH3006LD QFN 8* D TPH3006LS QFN 8* S TPH3006PD D TPH3006PS S TPH3205WS S Demo -Transphorm FET LED RF GaN 8 12 GaN, SiC Si,SiC,GaN GaN and SiC offer: GaNoffers: SiC offers: 2007 Goleta 130 250 JEDEC GaN Transphorm , FET HEMT1, MOS PN 2 D,S /Normally On3 G D,S 30V MOSFET 0V 5V
此电路有几W的损耗掉了 + V OUT D S G L1 C1 D1 + V IN L1 Q1 Q1 CS1 L1 CS2 DS1 C1 D1 LS + + V IN DS2 Efficiency (%) Loss (W) P out (W) 一般测试效率为97-98%较多 一旦换成氮化镓MOSFET，效率达99.2% 损 耗
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