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nm世代VLSIを担うMoreMoore技術 三次元ゲートMOSFET 小特集 2 最先端FinFETプロセス・集積化技術 も線幅が細くかつ均一なfinを作ることができる．図3 にこのSWT法と電子ビーム露光による場合，そして
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