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Basic PECVD Plasma Processes (SiH based)

Basic PECVD Plasma Processes (SiH based)

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When converting a recipe for a different SiH 4 dilutions, always remember that it is the SiH 4 flow that is important: 400sccm 5%SiH 4/N 2 = 20sccm SiH 4 + 380 sccm N 2 So you will need to flow 1000sccm 2%SiH 4/N 2 to achieve the same SiH 4 flow. The effect of the additional N 2 flow will be minimal, and can sometimes be compensated for by ...

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