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DRAM Technology - Smithsonian Institution

DRAM Technology - Smithsonian Institution

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DRAM Technology 7-6 INTEGRATED CIRCUIT ENGINEERING CORPORATION POLY 5 CAPACITOR SHEET POLY 4 CAPACITOR PLATE NITRIDE ETCH-STOP LAYER “STEM” POLY 2 BIT CONTACT PAD POLY 2 BIT LINE CONTACT REFLOW GLASS N+ S/D POLYCIDE 1 SELECT GATE Photo by ICE, “Memory 1997” 20844 Figure 7-8. Samsung 64Mbit DRAM …

  Technology, Stem, Ardms, Dram technology

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