Power MOSFET
integral reverse p - n junction diode-- 50 A Pulsed Diode Forward Currenta ISM - - 200 Body Diode Voltage VSD TJ = 25 °C, IS = 51 A, VGS = 0 Vb-- 2.5V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs - 120 180 ns Body Diode Reverse Recovery Charge Qrr - 0.53 0.80 nC
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