Power MOSFET
Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS-7.5 - Gate Input Resistance Rg f = 1 MHz, open drain 0.5 - 3.6 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode
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