Subthreshold Operation and gm/Id design - CppSim

← Back to document page

M.H. Perrott A Closer Look at Transconductance Assuming device is in strong inversion and in saturation: 2 Id Vgs Id_op ΔV VTH Vgs_op Vds > ΔV M1 Id Vgs NMOS g s d gm = ΔV gs ΔId Vgs_op

  Subthreshold, Gm id