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Subthreshold Operation and gm/Id design - CppSim
www.cppsim.comM.H. Perrott A Closer Look at Transconductance Assuming device is in strong inversion and in saturation: 2 Id Vgs Id_op ΔV VTH Vgs_op Vds > ΔV M1 Id Vgs NMOS g s d gm = ΔV gs ΔId Vgs_op
Design of MOS Amplifiers Using gm/ID Methodology
www.designers-guide.orgmethodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-ion- insulator micropower OTA. IEEE Journal of Solid State Circuits. Vol.