Transcription of Surface-Mount TRANSZORB Transient Voltage Suppressors
1 P6 SMB General Semiconductor Revision: 29-Sep-20221 Document Number: 88370 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TRANSZORB Transient Voltage SuppressorsLINKS TO ADDITIONAL RESOURCESDEVICES FOR BIDIRECTION APPLICATIONSFor bidirectional devices use CA suffix ( P6 SMB10CA). Electrical characteristics apply in both Low profile package Ideal for automated placement Glass passivated chip junction Available in unidirectional and bidirectional 600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): % Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 Material categorization: for definitions of compliance please see APPLICATIONSUse in sensitive electronics protection against Voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and DATACase.
2 SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified ( _X denotes revision code A, B, ..)Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker testPolarity: for unidirectional types the band denotes cathode end, no marking on bidirectional typesNotes(1)Non-repetitive current pulse, per fig. 3 and derated above TA = 25 C per fig. 2(2)Mounted on " x " ( mm x mm) copper pads to each terminal PRIMARY CHARACTERISTICSVWM (unidirectional) V to 459 VVWM (bidirectional) V to 185 VVBR (unidirectional) V to 540 VVBR (bidirectional) V to 220 VPPPM600 WIFSM (unidirectional only)100 ATJ CPolarityUnidirectional, bidirectionalPackageSMB (DO-214AA)SMB (DO-214AA)Cathode(unidirectional)(bidire ctional)Anode333 DDD3D3D ModelsAvailableAvailableMAXIMUM RATINGS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLVALUEUNITPeak power dissipation with a 10/1000 s waveform (1)(2) (fig.)
3 1)PPPM600 WPeak pulse current with a 10/1000 s waveform (1) IPPMSee next tableAPower dissipation on infinite heatsink at TA = 50 forward surge current ms single half sine-wave unidirectional only (2)IFSM100 AOperating junction and storage temperature rangeTJ, TSTG-65 to +150 CP6 SMB General Semiconductor Revision: 29-Sep-20222 Document Number: 88370 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Pulse test: tp 50 ms(2)Surge current waveform per fig. 3 and derate per fig. 2(3)For bi-directional types with VWM of 10 V and less, the ID limit is doubled(4)All terms and symbols are consistent with ANSI/IEEE (5)VF = V at IF = 50 A (unidirectional only)ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PART NUMBERDEVICE MARKING CODEBREAKDOWN Voltage VBR AT IT (1)(V) TEST CURRENT IT(mA)STAND-OFF VOLTAGEVWM (V)MAXIMUMREVERSELEAKAGE AT VWM ID (3) ( A) MAXIMUMPEAK PULSE CURRENT IPPM (2)(A) MAXIMUMCLAMPINGVOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/ C)
4 6V8A 6V8C 7V5A 7V5C 8V2A 8V2C 9V1A 9V1C 10A 10C 11A 11C 12A 12C 13A 13C 15A 15C 16A 16C 18A 18C 20A 20C 22A 22C 24A 24C 27A 27C 30A 30C 33A 33C 36A 36C 39A 39C 43A 43C 47A 47C 51A 51C 56A 56C 62A 62C 68A 68C 75A 75C 82A 82C 91A 91C 100A 100C 110A 110C 120A 120C 130A 130C 150A 150C 160A 160C 170A 170C 180A 180C 200A 200C 220A 220C 250A 300A 350A 400A 440A 480A 510A 540A General Semiconductor Revision: 29-Sep-20223 Document Number: 88370 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Mounted on minimum recommended pad layoutNotes(1)_B is available for (C)A to P6 SMB220(C)A, AEC-Q101 qualified(2)_D is available for P6 SMB250A to P6 SMB540A, AEC-Q101 qualifiedTHERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLVALUEUNITT ypical thermal resistance, junction to ambient air (1)R JA 100 C/ WTypical thermal resistance, junction to leadR JL20 ORDERING INFORMATION (Example) PREFERRED P/NUNIT WEIGHT (g) Voltage RANGE (V)PACKAGE CODEBASE QUANTITYDELIVERY to to 220527507" diameter plastic tape and to to 220527507" diameter plastic tape and to to 2205B320013" diameter plastic tape and to to 2205B320013" diameter plastic tape and (1) to to 220H7507" diameter plastic tape and (1) (1) to to 220I320013" diameter plastic tape and (1)P6 SMB250 AHM3_D/H (2) to 540-H7507" diameter plastic tape and reelP6 SMB250 AHM3_D/I (2) to 540-I320013" diameter plastic tape and reelP6 SMB General Semiconductor Revision: 29-Sep-20224 Document Number: 88370 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)Fig. 1 - Peak Pulse Power Rating CurveFig. 2 - Pulse Power or Current vs. Initial Junction TemperatureFig. 3 - Pulse WaveformFig. 4 - Typical Junction CapacitanceFig. 5 - Typical Transient Thermal ImpedanceFig. 6 - Maximum Non-Repetitive Peak Forward Surge x " ( x mm)Copper Pad s s 10 s 100 s ms 10 ms 100 10 1 PPPM - Peak Pulse Power (kW)td - Pulse Width (s)0 2550751001007550250125150175200TJ - Initial Temperature ( C)Peak Pulse Power (PPP) or Current (IPP)Derating in Percentage, % - Peak Pulse Current, % IRSMt - Time (ms)tr = 10 sPeak ValueIPPMHalf Value -IPPMIPP210/1000 s Waveformas defined by = 25 CPulse Width (td)is defined as the Pointwhere the Peak Currentdecays to 50 % of IPPM101001000101100200 Uni-DirectionalBi-Directional6000TJ = 25 Cf = MHzVsig = 50 mVp-pMeasured atZero BiasVR, Measured at Stand-Off Voltage VWMCJ - Junction Capacitance (pF)VWM - Reverse Stand-Off Voltage (V) 10 100 1 10 100 1000 tp - Pulse Duration (s) Transient Thermal Impedance ( C/W)
7 Ms Single Half Sine-WaveUni-Directional OnlyNumber of Cycles at 60 HzPeak Forward Surge Current (A)P6 SMB General Semiconductor Revision: 29-Sep-20225 Document Number: 88370 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT OUTLINE DIMENSIONS in inches (millimeters)Cathode BandSMB (DO-214AA) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )0 (0) ( ) ( ) ( ) ( ) ( ) ( )Mounting Pad ( ) ( ) ( ) ( ) Disclaimer Revision: 01-Jan-20231 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.
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