P-Channel 100-V (D-S) MOSFET

1 vishay SiliconixSUM90P10-19 LDocument Number: 73474S09-0659-Rev. E, 100-V (D-S) MOSFETFEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/ECNotes: a. Package Surface Mounted on 1" x 1" FR4 board. c. t = 10 Maximum under Steady State conditions is 40 C/W. PRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)Qg (Typ.)- at VGS = - 10 V - 9097 at VGS = - V - 85TO-263 S GD Top View Drain Connected to Tab Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free)SGDP- channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C.

2 Unless otherwise notedParameter Symbol Limit Unit Drain-Source Voltage VDS- 100 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)

3 TC = 25 CID- 90 ATC = 125 C- 52TA = 25 C- , cTA = 125 C- , cPulsed Drain Current IDM- 90 Continuous Source-Drain Diode Current TC = 25 CIS- 250TA = 25 C- 9b, cAvalanche CurrentL = mHIAS- 70 Single-Pulse Avalanche EnergyEAS245mJMaximum Power DissipationTC = 25 CPD375 WTC = 125 C125TA = 25 , cTA = 125 , cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 175 CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambientb, dt 10 sRthJA811 C/WMaximum Junction-to-Case (Drain)Steady Number: 73474S09-0659-Rev.

4 E, 20-Apr-09 vishay SiliconixSUM90P10-19 LNotesa. Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions Min.

5 StaticDrain-Source Breakdown VoltageVDS VGS = 0 V, ID = - 250 A - 100 VVDS Temperature Coefficient VDS/TJID = - 250 A - 125 mV/ CVGS(th) Temperature Coefficient VGS(th)/TJ Threshold VoltageVGS(th)VDS = VGS , ID = - 250 A - 1 - 3 VGate-Source LeakageIGSSVDS = 0 V, VGS = 20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = - 100 V, VGS = 0 V - 1 AVDS = - 100 V, VGS = 0 V, TJ = 175 C - 500On-State Drain CurrentaID(on) VDS 10 V, VGS = - 10 V - 90 ADrain-Source On-State ResistanceaRDS(on)

6 VGS = - 10 V, ID = - 20 A VGS = - V, ID = - 15 A Transconductanceagfs VDS = - 15 V, ID = - 20 A 80 SDynamicbInput CapacitanceCissVDS = - 50 V, VGS = 0 V, f = 1 MHz11100pFOutput CapacitanceCoss700 Reverse Transfer CapacitanceCrss1690 Total Gate ChargeQg VDS = - 50 V, VGS = - 10 V, ID = - 90 A 217326nCVDS = - 50 V, VGS = - V, ID = - 90 A 97146 Gate-Source ChargeQgs 42 Gate-Drain ChargeQgd 51 Gate ResistanceRgf = 1 Tu r n - O n D e l a y T i m etd(on) VDD = - 50 V, RL = ID - 90 A, VGEN = - 10 V, Rg = 1 2030nsRise Timetr510855 Turn-Off Delay Timetd(off) 145220 Fall Timetf8701300 Drain-Source Body Diode CharacteristicsContinous Source-Drain Diode CurrentISTC = 25 C- 90 APulse Diode Forward CurrentaISM- 250 Body Diode VoltageVSDIS = - 20 A- Diode Reverse Recovery TimetrrIF = - 20 A, dI/dt = 100 A/ s, TJ = 25 C80120nsBody Diode Reverse Recovery ChargeQrr220330nCReverse Recovery Fall Timeta56nsReverse Recovery Rise Timetb24 Document Number.

7 73474S09-0659-Rev. E, SiliconixSUM90P10-19 LTYPICAL CHARACTERISTICS 25 C, unless otherwise notedOutput CharacteristicsOn-Resistance vs. Drain CurrentGate Charge0 30 60 90 120 150 180 01234 V GS = 10 V thru 4 VVDS - Drain-to-Source Voltage (V)3 V IDDrain-Current (A) - 0 20406080100120V GS = 10 VI D - Drain Current (A)V GS = V R S(on) - On-Resistance ( )D g - Total Gate Charge (nC)V DS = 80 V V DS = 50 V VSG - Gate-to-Source Voltage (V) I D = - 90 A Transfer CharacteristicsCapacitanceOn-Resistance vs.

8 Junction Temperature0 10 20 30 40 25 C T C = 125 C - 55 C V GS - Gate-to-Source Voltage (V)ID Drain Current (A) - 0 3000 6000 9000 12 00015 000020406080100C oss C iss V DS - Drain-to-Source (V)C rss C - Capacitance (pF) - 50 - 250255075100 125 150 175 V GS = 10 V T J - Junction Temperature ( C)R) n o ( S D- On-Resistance I D = 20 A (Normalized) Number: 73474S09-0659-Rev. E, 20-Apr-09 vishay SiliconixSUM90P10-19 LTYPICAL CHARACTERISTICS 25 C, unless otherwise notedSource-Drain Diode Forward VoltageThreshold VoltagePower Derating (Junction-to-Case) T J = 150 CV SD - Source-to-Drain Voltage (V)100 10 1 ISSource Current (A) - 25 C- - - 50 - 250255075100 125 150 175I D = 10 mA T J - Temperature ( C)V ) h t ( S G ) V ( e c n a i r a V T - Case-Temperature ( C) Dissipation (W)

9 R e w o P 0 50 100 150 200 250 300 350 400 255075100125150175C On-Resistance vs. Gate-to-Source VoltageSingle Pulse, Junction-to-Case (TC = 25 C)Safe Operating 12345678910V GS - Gate-to-Source Voltage (V)25 C 125 C RDS(on) - Drain-to-Source On-Resistance ( )Time (s) r (W)e wo P 0 1000 2000 3000 4000 5000 6000 V DS - Drain-to-Source Voltage (V)* V GS > minimum V GS at which RDS(on)is 1001000101 msDC100 s10 s10 msID - Drain Current (A)1 Single pulseTc = 25 CLimited by R *DS(on) vishay SiliconixSUM90P10-19 LDocument Number.

10 73474S09-0659-Rev. E, CHARACTERISTICS 25 C, unless otherwise notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliabilitydata, see Avalanche and Drain Current vs. Case Temperature0 30 60 90 120 025 50 75 100 125 150 175ID - TC - Case Temperature ( C)Drain Current (A) Avalanche Current vs.