Single-Line ESD Protection in SOT-23

1 GSOT03 to Semiconductors Rev. , 17-Apr-20191 Document Number: 85807 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ESD Protection in SOT-23 MARKING (example only)YYY = type code (see table below) XX = date codeDESIGN SUPPORT TOOLS AVAILABLEFEATURES Single-Line ESD Protection device ESD immunity acc. IEC 61000-4-2 30 kV contact discharge 30 kV air discharge ESD capability according to AEC-Q101: human body model: class H3B: > 8 kV Space saving SOT-23 package e3 - Sn AEC-Q101 qualified available Material categorization: for definitions of compliance please see 2042112320512120357 YYYXXXX33DD3D3D ModelsModelsORDERING INFORMATIONPART NUMBER (EXAMPLE)ENVIRONMENTAL AND QUALITY CODEPACKAGING CODEORDERING CODE (EXAMPLE)AEC-Q101 QUALIFIEDRoHS-COMPLIANT + LEAD (Pb)-FREETIN PLATED3K PER 7" REEL (8 mm TAPE), 15K/BOX = MOQ10K PER 13" REEL (8 mm TAPE), 10K/BOX = MOQSTANDARDGREENGSOT05-E3-08 GSOT05-E3-08 GSOT05-G3-08 GSOT05-G3-08 GSOT05-HE3-08 GSOT05-HE3-08 GSOT05-HG3-08 GSOT05-HG3-08 GSOT05-E3-18 GSOT05-E3-18 GSOT05-G3-18 GSOT05-G3-18 GSOT05-HE3-18 GSOT05-HE3-18 GSOT05-HG3-18 GSOT05-HG3-18 PACKAGE DATADEVICE NAMEPACKAGE NAMETYPE CODEENVIRONMENTAL STATUSWEIGHTMOLDING COMPOUND FLAMMABILITY RATINGMOISTURE SENSITIVITY LEVELSOLDERING mgUL 94 V-0 MSL level 1(according J-STD-020)Peak temperature max.

2 260 mgUL 94 V-0 MSL level 1 (according J-STD-020)Peak temperature max. 260 mgUL 94 V-0 MSL level 1 (according J-STD-020)Peak temperature max. 260 mgUL 94 V-0 MSL level 1 (according J-STD-020)Peak temperature max. 260 mgUL 94 V-0 MSL level 1 (according J-STD-020)Peak temperature max. 260 mgUL 94 V-0 MSL level 1 (according J-STD-020)Peak temperature max. 260 mgUL 94 V-0 MSL level 1 (according J-STD-020)Peak temperature max. 260 mgUL 94 V-0 MSL level 1 (according J-STD-020)Peak temperature max. 260 mgGSOT03 to Semiconductors Rev. , 17-Apr-20192 Document Number: 85807 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MAXIMUM RATINGS GSOT03 PARAMETERTEST CONDITIONSSYMBOLVALUEUNITPeak pulse currentPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotIPPM30 APeak pulse powerPin 3 to 1acc.

3 IEC 61000-4-5, tp = 8/20 s; single shotPPP369 WESD immunityContact discharge acc. IEC 61000-4-2; 10 pulsesVESD 30kVAir discharge acc. IEC 61000-4-2; 10 pulses 30kVOperating temperatureJunction temperatureTJ-40 to +125 CStorage temperatureTSTG-55 to +150 CABSOLUTE MAXIMUM RATINGS GSOT04 PARAMETERTEST CONDITIONSSYMBOLVALUEUNITPeak pulse currentPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotIPPM30 APeak pulse powerPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotPPP429 WESD immunityContact discharge acc. IEC 61000-4-2; 10 pulsesVESD 30kVAir discharge acc. IEC 61000-4-2; 10 pulses 30kVOperating temperatureJunction temperatureTJ-40 to +125 CStorage temperatureTSTG-55 to +150 CABSOLUTE MAXIMUM RATINGS GSOT05 PARAMETERTEST CONDITIONSSYMBOLVALUEUNITPeak pulse currentPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotIPPM30 APeak pulse powerPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotPPP480 WESD immunityContact discharge acc.

4 IEC 61000-4-2; 10 pulsesVESD 30kVAir discharge acc. IEC 61000-4-2; 10 pulses 30kVOperating temperatureJunction temperatureTJ-40 to +125 CStorage temperatureTSTG-55 to +150 CABSOLUTE MAXIMUM RATINGS GSOT08 PARAMETERTEST CONDITIONSSYMBOLVALUEUNITPeak pulse currentPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotIPPM18 APeak pulse powerPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotPPP345 WESD immunityContact discharge acc. IEC 61000-4-2; 10 pulsesVESD 30kVAir discharge acc. IEC 61000-4-2; 10 pulses 30kVOperating temperatureJunction temperatureTJ-40 to +125 CStorage temperatureTSTG-55 to +150 CGSOT03 to Semiconductors Rev. , 17-Apr-20193 Document Number: 85807 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MAXIMUM RATINGS GSOT12 PARAMETERTEST CONDITIONSSYMBOLVALUEUNITPeak pulse currentPin 3 to 1acc.

5 IEC 61000-4-5, tp = 8/20 s; single shotIPPM12 APeak pulse powerPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotPPP312 WESD immunityContact discharge acc. IEC 61000-4-2; 10 pulsesVESD 30kVAir discharge acc. IEC 61000-4-2; 10 pulses 30kVOperating temperatureJunction temperatureTJ-40 to +125 CStorage temperatureTSTG-55 to +150 CABSOLUTE MAXIMUM RATINGS GSOT15 PARAMETERTEST CONDITIONSSYMBOLVALUEUNITPeak pulse currentPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotIPPM8 APeak pulse powerPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotPPP230 WESD immunityContact discharge acc. IEC 61000-4-2; 10 pulsesVESD 30kVAir discharge acc. IEC 61000-4-2; 10 pulses 30kVOperating temperatureJunction temperatureTJ-40 to +125 CStorage temperatureTSTG-55 to +150 CABSOLUTE MAXIMUM RATINGS GSOT24 PARAMETERTEST CONDITIONSSYMBOLVALUEUNITPeak pulse currentPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotIPPM5 APeak pulse powerPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotPPP235 WESD immunityContact discharge acc.

6 IEC 61000-4-2; 10 pulsesVESD 30kVAir discharge acc. IEC 61000-4-2; 10 pulses 30kVOperating temperatureJunction temperatureTJ-40 to +125 CStorage temperatureTSTG-55 to +150 CABSOLUTE MAXIMUM RATINGS GSOT36 PARAMETERTEST CONDITIONSSYMBOLVALUEUNITPeak pulse currentPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single pulse powerPin 3 to 1acc. IEC 61000-4-5, tp = 8/20 s; single shotPPP248 WESD immunityContact discharge acc. IEC 61000-4-2; 10 pulsesVESD 30kVAir discharge acc. IEC 61000-4-2; 10 pulses 30kVOperating temperatureJunction temperatureTJ-40 to +125 CStorage temperatureTSTG-55 to +150 CGSOT03 to Semiconductors Rev. , 17-Apr-20194 Document Number: 85807 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1- line Bidirectional Asymmetrical Protection mode)With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients.

7 With pin 1 connected to ground and pin 3 connected to a signal- or data- line which has to be protected. As long as the voltage level on the data- or signal- line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the Protection diode between pin 1 and pin 3 offers a high isolation to the ground line . The Protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the breakdown voltage level of the Protection diode, the diode becomes conductive and shorts the transient current to ground. Now the Protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the Protection diode. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction through the Protection diode.

8 The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and Asymmetrical (BiAs).ELECTRICAL CHARACTERISTICS GSOT03 (Tamb = 25 C unless otherwise specified) between pin 3 and pin 1 PARAMETERTEST pathsNumber of lines which can be protectedNchannel--1linesReverse stand-off voltageMax. reverse working voltageat IR = 100 currentat VR = VIR--100 AReverse breakdown voltageat IR = 1 clamping voltageat IPP = 1 A IPP = IPPM = 30 clamping voltageat IPP = 1 A IPP = IPPM = 30 VR = 0 V; f = 1 MHzCD-420600pFat VR = V; f = 1 MHz-260-pFELECTRICAL CHARACTERISTICS GSOT04 (Tamb = 25 C unless otherwise specified) between pin 3 and pin 1 PARAMETERTEST pathsNumber of lines which can be protectedNchannel--1linesReverse stand-off voltageMax. reverse working voltageVRWM--4 VReverse voltageat IR = 20 AVR4- -VReverse currentat VR = 4 VIR--20 AReverse breakdown voltageat IR = 1 VReverse clamping voltageat IPP = 1 A Vat IPP = IPPM = 30 clamping voltageat IPP = 1 A IPP = IPPM = 30 VR = 0 V; f = 1 MHzCD-310450pFat VR = 2 V; f = 1 MHz-200-pF20422L1 123 GroundBiAsGSOT03 to Semiconductors Rev.

9 , 17-Apr-20195 Document Number: 85807 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS GSOT05 (Tamb = 25 C unless otherwise specified) between pin 3 and pin 1 PARAMETERTEST pathsNumber of lines which can be protectedNchannel--1linesReverse stand-off voltageMax. reverse working voltageVRWM--5 VReverse voltageat IR = 10 AVR5- -VReverse currentat VR = 5 VIR--10 AReverse breakdown voltageat IR = 1 VReverse clamping voltageat IPP = 1 A IPP = IPPM = 30 A-1216 VForward clamping voltageat IPP = 1 A IPP = IPPM = 30 VR = 0 V; f = 1 MHzCD-260350pFat VR = V; f = 1 MHz-150-pFELECTRICAL CHARACTERISTICS GSOT08 (Tamb = 25 C unless otherwise specified) between pin 3 and pin 1 PARAMETERTEST pathsNumber of lines which can be protectedNchannel--1linesReverse stand-off voltageMax. reverse working voltageVRWM--8 VReverse voltageat IR = 5 AVR8- -VReverse currentat VR = 8 VIR--5 AReverse breakdown voltageat IR = 1 mAVBR91011 VReverse clamping voltageat IPP = 1 A IPP = IPPM = 18 clamping voltageat IPP = 1 A IPP = IPPM = 18 A-3-VCapacitanceat VR = 0 V; f = 1 MHzCD-160250pFat VR = 4 V; f = 1 MHz-80-pFELECTRICAL CHARACTERISTICS GSOT12 (Tamb = 25 C unless otherwise specified) between pin 3 and pin 1 PARAMETERTEST pathsNumber of lines which can be protectedNchannel--1linesReverse stand-off voltageMax.

10 Reverse working voltageVRWM--12 VReverse voltageat IR = 1 AVR12--VReverse currentat VR = 12 VIR--1 AReverse breakdown voltageat IR = 1 clamping voltageat IPP = 1 A IPP = IPPM = 12 clamping voltageat IPP = 1 A IPP = IPPM = 12 VR = 0 V; f = 1 MHzCD-115150pFat VR = 6 V; f = 1 MHz-50-pFGSOT03 to Semiconductors Rev. , 17-Apr-20196 Document Number: 85807 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS GSOT15 (Tamb = 25 C unless otherwise specified) between pin 3 and pin 1 PARAMETERTEST pathsNumber of lines which can be protectedNchannel--1linesReverse stand-off voltageMax. reverse working voltageVRWM--15 VReverse voltageat IR = 1 AVR15--VReverse currentat VR = 15 VIR--1 AReverse breakdown voltageat IR = 1 clamping voltageat IPP = 1 A IPP = IPPM = 8 clamping voltageat IPP = 1 A IPP = IPPM = 8 VR = 0 V; f = 1 MHzCD-90120pFat VR = V; f = 1 MHz-35-pFELECTRICAL CHARACTERISTICS GSOT24 (Tamb = 25 C unless otherwise specified) between pin 3 and pin 1 PARAMETERTEST pathsNumber of lines which can be protectedNchannel--1linesReverse stand-off voltageMax.